Transistor Mosfet BS170

Drain-source voltaje VDS max.: 60VGate-source voltaje VGS max.: 15VDrain current (DC) ID max.: 500mATotal power dissipation up to Tamb 25 °C Ptot max.: 830mWJunction temperature Tj max.: 150°CDrain-source ON-resistanceVGS = 10V; ID = 200mA RDS(0n)max.: 5 OhmMás detalles en el datasheet